High-Efficiency Power Conversion with Infineon IPB048N15N5 OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronic systems, from server farms and telecom infrastructure to industrial automation and renewable energy applications, places immense demands on power conversion stages. At the heart of these systems, the choice of switching device is paramount. The Infineon IPB048N15N5, a member of the OptiMOS™ 5 150 V family, stands out as a premier solution engineered to push the boundaries of performance.

This MOSFET is built upon Infineon’s advanced superjunction (SJ) technology, which is the cornerstone of its exceptional characteristics. A key metric for efficiency, especially in high-frequency switching applications like switch-mode power supplies (SMPS) and DC-DC converters, is the figure-of-merit (FOV), defined by R DS(on) Q G. The IPB048N15N5 boasts an ultra-low on-state resistance (R DS(on)) of just 4.8 mΩ at 10 V, coupled with an outstanding gate charge (Q G). This superior FOV directly translates to minimized conduction and switching losses, allowing for cooler operation, higher switching frequencies, and the potential for smaller magnetic components.

The benefits of these technical achievements are profound in real-world designs. Reduced power loss means higher overall system efficiency, which is critical for reducing operational costs and cooling requirements in energy-intensive applications. The ability to switch at higher frequencies enables engineers to shrink the size of passive components such as inductors and capacitors, leading to a significant increase in power density. Furthermore, the robust design of the OptiMOS 5 technology ensures high reliability and ruggedness, providing enhanced tolerance to overload conditions and contributing to the long-term longevity of the end product.

Housed in a TO-Leadless (TOLL) package, the IPB048N15N5 is perfectly suited for space-constrained applications. This package offers an excellent thermal performance due to its large exposed cooling pad and a very low package footprint, which is only 30% of a standard D2PAK. This makes it an ideal choice for modern, compact power designs where board space is at a premium.

ICGOODFIND: The Infineon IPB048N15N5 G OptiMOS 5 MOSFET is a top-tier component that sets a new benchmark for high-efficiency power conversion. Its industry-leading low R DS(on) and optimized switching characteristics make it an indispensable choice for designers aiming to achieve maximum efficiency, superior power density, and robust reliability in their next-generation power systems.

Keywords: Power Efficiency, OptiMOS 5, R DS(on), Switching Loss, Power Density