Infineon IAUC45N04S6N070HATMA1: A High-Performance OptiMOS 6 Power MOSFET for Advanced Automotive and Industrial Applications

The relentless drive towards greater efficiency, power density, and reliability in automotive and industrial systems demands semiconductor components that push the boundaries of performance. Addressing this need, Infineon Technologies introduces the IAUC45N04S6N070HATMA1, a state-of-the-art N-channel power MOSFET from its groundbreaking OptiMOS™ 6 40V family. This device is engineered to set new benchmarks in switching performance and power conversion efficiency for the most demanding applications.

At the core of this MOSFET's superiority is its advanced superjunction (SJ) technology, which has been meticulously refined. The result is an exceptionally low on-state resistance (RDS(on)) of just 0.7 mΩ (max. at 10 V). This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for smaller, more compact thermal management solutions. This is particularly critical in space-constrained environments like electric vehicle (EV) powertrains, advanced driver-assistance systems (ADAS), and high-current DC-DC converters.

Beyond its stellar static performance, the IAUC45N04S6N070HATMA1 excels in dynamic operation. It features an optimized gate charge (Qg) and outstanding switching characteristics, which collectively work to significantly reduce switching losses. This allows for the design of systems that can operate at higher frequencies, enabling the use of smaller passive components like inductors and capacitors, thereby increasing overall power density. The robust design ensures stable and reliable operation even under the harsh conditions typical of automotive environments, including high temperatures and significant voltage transients.

The device is offered in a SuperSO8 package (PG-TDSON-8), which provides an excellent power-to-footprint ratio. This package is renowned for its low parasitic inductance and superior thermal performance, further enhancing the MOSFET's efficiency and reliability in real-world applications. Its AEC-Q101 qualification guarantees that it meets the stringent quality and reliability standards required for automotive electronics, making it a trusted choice for mission-critical systems.

ICGOOODFIND: The Infineon IAUC45N04S6N070HATMA1 stands out as a top-tier power MOSFET that masterfully balances ultra-low conduction loss with superior switching performance. Its exceptional efficiency and high power density make it an ideal solution for advancing technology in next-generation automotive electrification, from 48V systems to battery management, and in high-performance industrial power supplies and motor drives.

Keywords:

OptiMOS™ 6

Ultra-low RDS(on)

High Efficiency

Automotive Grade (AEC-Q101)

Power Density