Infineon IPB60R120P7ATMA1 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Technical Specifications

The Infineon IPB60R120P7ATMA1 stands as a premier representative of the CoolMOS™ P7 technology, a superjunction (SJ) MOSFET family engineered to deliver exceptional efficiency and power density in a wide array of switching applications. This 600V, 11.7A power transistor is specifically designed to meet the rigorous demands of modern power conversion systems, setting new benchmarks in performance and reliability.

Technical Specifications and Key Features

At its core, the IPB60R120P7ATMA1 is defined by its ultra-low on-state resistance (R DS(on)) of just 120mΩ (max. at T J = 25°C). This critical parameter is the cornerstone of its high-efficiency performance, as it directly minimizes conduction losses. Combined with outstanding switching characteristics and low gate charge (Q G ), it ensures that switching losses are also kept to an absolute minimum. This balance is vital for high-frequency operation, enabling designers to create smaller, lighter, and more efficient power supplies.

The part is housed in a TO-263-3 (D2PAK) package, offering a robust physical structure with excellent thermal performance. Its high peak current capability makes it exceptionally suitable for harsh operating environments. Furthermore, the device incorporates advanced features such as:

High dv/dt and di/dt capability for ruggedness in switching.

Integrated ESD protection enhances system-level reliability.

A 100% avalanche tested guarantee, ensuring maximum robustness and longevity in the field.

Primary Applications

The optimal blend of high voltage capability, low resistance, and fast switching speed makes the IPB60R120P7ATMA1 an ideal choice for:

Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards like 80 PLUS Titanium are critical.

Power Factor Correction (PFC) stages: Both in interleaved and single-stage boost configurations.

Motor Control and Drives: Inverter bridges for industrial motors.

Lighting: High-performance LED driving solutions.

Solar Inverters and other renewable energy applications.

Leveraging the Datasheet and Application Notes

To fully capitalize on the capabilities of this MOSFET, a thorough review of its official datasheet is imperative. This document provides absolute maximum ratings, detailed electrical characteristics, switching performance graphs, and safe operating area (SOA) diagrams. It is the ultimate source for all critical design-in parameters.

For practical implementation, Infineon's application notes for the CoolMOS™ P7 series are invaluable resources. They offer profound insights into:

PCB layout recommendations to minimize parasitic inductance and ensure stable switching.

Gate driving techniques to optimize switching behavior and avoid cross-conduction.

Thermal management solutions to maximize power handling.

Guidance on achieving highest efficiency across various load conditions.

ICGOODFIND: The Infineon IPB60R120P7ATMA1 CoolMOS™ P7 is a state-of-the-art power transistor that masterfully combines high efficiency, robust performance, and superior reliability. Its industry-leading R DS(on) and fast switching speed make it a cornerstone component for engineers aiming to push the boundaries of power density and energy savings in next-generation applications, from advanced computing to green energy systems.

Keywords: CoolMOS™ P7, Superjunction MOSFET, High Efficiency, Low R DS(on), Power Density