Infineon ICE5AR0680AGXUMA1: A High-Performance 650V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. Addressing these critical demands, the Infineon ICE5AR0680AGXUMA1 stands out as a premier 650V superjunction MOSFET from the advanced CoolMOS™ P7 technology platform. This power transistor is engineered to deliver exceptional performance in a wide array of high-power and high-frequency switching applications, including server and telecom SMPS (Switched-Mode Power Supplies), industrial motor drives, solar inverters, and EV charging infrastructure.

A cornerstone of this device is its revolutionary superjunction structure, which drastically reduces on-state resistance (RDS(on)) while minimizing gate and output charges. This technological leap translates into significantly lower conduction and switching losses, a key factor for enhancing overall system efficiency. Designers can achieve higher power density designs by operating at elevated switching frequencies without the typical penalty of excessive heat generation. The low RDS(on) of just 68 mΩ (max) ensures minimal voltage drop during operation, further boosting efficiency.

The ICE5AR0680AGXUMA1 is also designed with robust reliability in mind. It offers an exceptional avalanche ruggedness and high peak current capability, making it highly resilient against voltage spikes and stressful overload conditions commonly encountered in industrial environments. Furthermore, the P7 series incorporates an integrated additional source connection within the TO-220 package. This feature is crucial for achieving a more stable switching performance by reducing parasitic inductance in the driver loop, which in turn mitigates voltage overshoot and enhances system stability.

Another significant advantage is its optimized body diode, which provides excellent reverse recovery characteristics. This is vital for circuits operating in hard-switching or power factor correction (PFC) stages, as it reduces recovery losses and electromagnetic interference (EMI), simplifying the design of filtering components.

ICGOODFIND: The Infineon ICE5AR0680AGXUMA1 exemplifies the pinnacle of power MOSFET design, merging ultra-low losses with superior robustness. It is an optimal component for engineers striving to push the boundaries of efficiency and power density in next-generation power conversion systems, ensuring both high performance and long-term reliability.

Keywords: CoolMOS™ P7, High Efficiency, Low RDS(on), Avalanche Ruggedness, Power Density