Infineon IPA80R1K4P7XKSA1 CoolMOS™ P7 Power Transistor: Datasheet, Specifications, and Application Notes

The Infineon IPA80R1K4P7XKSA1 is a state-of-the-art 800V CoolMOS™ P7 power MOSFET engineered to deliver exceptional efficiency and reliability in high-performance switching applications. As part of Infineon’s seventh-generation CoolMOS™ family, this transistor sets a new benchmark in minimizing switching and conduction losses, making it an ideal choice for modern power supply designs.

Key Specifications and Features

The IPA80R1K4P7XKSA1 is characterized by its ultra-low effective drain-source resistance (R DS(on)) of just 140 mΩ at a gate-source voltage of 10 V. This low on-resistance directly contributes to reduced conduction losses, enhancing overall system efficiency. With a continuous drain current (I D) of 21 A and the ability to handle high peak currents, this device is robust enough for demanding environments.

A standout feature of the CoolMOS™ P7 series is its integrated fast body diode, which improves reverse recovery performance. This makes the component particularly suitable for zero-voltage switching (ZVS) topologies commonly used in telecom servers, industrial SMPS, and lighting applications. Furthermore, the transistor offers high dv/dt immunity and excellent thermal performance, ensuring stable operation under varying load conditions.

Application Notes

Designing with the IPA80K1K4P7XKSA1 requires attention to several key aspects:

- Gate Driving: A proper gate driver with adequate drive voltage (recommended 10–15 V) is essential to fully utilize the low R DS(on) characteristic. A well-designed gate drive circuit also helps minimize electromagnetic interference (EMI).

- Thermal Management: Despite its high efficiency, effective heat dissipation through PCB layout design or an external heatsink is critical for maintaining performance and longevity.

- Topology Selection: This MOSFET is especially effective in phase-shifted full-bridge (PSFB), LLC resonant converters, and power factor correction (PFC) circuits.

ICGOOODFIND Summary:

The Infineon IPA80R1K4P7XKSA1 CoolMOS™ P7 represents a significant advancement in high-voltage power MOSFET technology, offering designers a combination of high efficiency, thermal stability, and switching robustness. Its optimized characteristics make it well-suited for next-generation power electronics in industrial, computing, and renewable energy systems.

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Keywords:

CoolMOS™ P7,

800V MOSFET,

Low R DS(on),

Zero-Voltage Switching,

Power Supply Efficiency